darlington complementary silicon power transistors . . . designed for generalpurpose amplifier and low frequency switching applications. ? high dc current gain e min h fe = 1000 @ i c = 5 a, v ce = 4 v ? collectoremitter sustaining voltage e @ 30 ma v ceo(sus) = 60 vdc (min) e tip140, tip145 80 vdc (min) e tip141, tip146 100 vdc (min) e tip142, tip147 ? monolithic construction with builtin baseemitter shunt resistor ???????????????????????? ???????????????????????? maximum ratings ??????????? ??????????? rating ???? ???? symbol ??? ??? tip140 tip145 ???? ???? tip141 tip146 ???? ???? tip142 tip147 ??? ??? unit ??????????? ??????????? collectoremitter voltage ???? ???? v ceo ??? ??? 60 ???? ???? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? collectorbase voltage ???? ???? v cb ??? ??? 60 ???? ???? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? emitterbase voltage ???? ???? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak (1) ???? ? ?? ? ???? i c ????????? ? ??????? ? ????????? 10 15 ??? ? ? ? ??? adc ??????????? ??????????? base current e continuous ???? ???? i b ????????? ????????? 0.5 ??? ??? adc ??????????? ? ????????? ? ??????????? total device dissipation @ t c = 25 c ???? ? ?? ? ???? p d ????????? ? ??????? ? ????????? 125 ??? ? ? ? ??? watts ??????????? ??????????? operating and storage junction temperature range ???? ???? t j , t stg ????????? ????????? 65 to +150 ??? ??? c ???????????????????????? ? ?????????????????????? ? ???????????????????????? thermal characteristics ????????????? ????????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.0 ??? ??? c/w ????????????? ????????????? thermal resistance, case to ambient ????? ????? r q ja ?????? ?????? 35.7 ??? ??? c/w (1) 5 ms, 10% duty cycle. darlington schematics base emitter collector 8.0 k 40 base emitter collector 8.0 k 40 npn tip140 tip141 tip142 pnp tip145 tip146 tip147 preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 4 1 publication order number: tip140/d tip140 tip141 tip142 tip145 tip146 tip147 10 ampere darlington complementary silicon power transistors 60100 volts 125 watts *on semiconductor preferred device * npn pnp * * * case 340d02
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (1) (i c = 30 ma, i b = 0) tip140, tip145 tip141, tip146 tip142, tip147 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ? ?? ? ???? 60 80 100 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) tip140, tip145 (v ce = 40 vdc, i b = 0) tip141, tip146 (v ce = 50 vdc, i b = 0) tip142, tip147 ????? ? ??? ? ? ??? ? ????? i ceo ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.0 2.0 2.0 ??? ? ? ? ? ? ? ??? ma ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v cb = 60 v, i e = 0) tip140, tip145 (v cb = 80 v, i e = 0) tip141, tip146 (v cb = 100 v, i e = 0) tip142, tip147 ????? ? ??? ? ? ??? ? ????? i cbo ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? ma ??????????????????? ??????????????????? emitter cutoff current (v be = 5.0 v) ????? ????? i ebo ???? ???? e ??? ??? e ???? ???? 2 0 ??? ??? ma ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 5.0 a, v ce = 4.0 v) (i c = 10 a, v ce = 4.0 v) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 1000 500 ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 5.0 a, i b = 10 ma) (i c = 10 a, i b = 40 ma) ????? ? ??? ? ????? v ce(sat) ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 2.0 3.0 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 10 a, i b = 40 ma) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 3.5 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage (i c = 10 a, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 3.0 ??? ? ? ? ??? vdc ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? resistive load (see figure 1) ?????? ?????? delay time ?????????????? ?????????????? ????? ????? t d ???? ???? e ??? ??? 0.15 ???? ???? e ??? ??? m s ?????? ?????? rise time ?????????????? ?????????????? (v cc = 30 v, i c = 5.0 a, i b = 20 ma duty cycle 20% ????? ????? t r ???? ???? e ??? ??? 0.55 ???? ???? e ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? i b = 20 ma, duty cycle 2.0%, i b1 = i b2 , r c & r b varied, t j = 25 c) ????? ????? t s ???? ???? e ??? ??? 2.5 ???? ???? e ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? i b1 i b2 , r c & r b varied, t j 25 c) ????? ????? t f ???? ???? e ??? ??? 2.5 ???? ???? e ??? ??? m s (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. figure 1. switching times test circuit 10 0.2 figure 2. switching times i c , collector current (amp) t, time (s) m 5.0 2.0 0.5 0.1 0.5 1.0 3.0 5.0 10 20 0.2 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +12 v v 1 appox. -8.0 v t r , t f 10 ns duty cycle = 1.0% 25 m s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 40 scope for t d and t r , d1 is disconnected and v 2 = 0 r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c for npn test circuit reverse diode and voltage polarities. 1.0
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 3 v ce(sat) , collector-emitter saturation voltage (volts) v be , base-emitter voltage (volts) v be , base-emitter voltage (volts) 5000 0.5 figure 3. dc current gain versus collector current i c , collector current (amps) 300 1.0 2.0 3.0 5.0 7.0 10 500 h fe , dc current gain v ce = 4.0 v 4.0 npn tip140, tip141, tip142 pnp tip145, tip146, tip147 figure 4. collectoremitter saturation voltage 5.0 -75 t j , junction temperature ( c) 0.5 i c = 10 a, i b = 4.0 ma 2.0 3.0 4.0 -75 t j , junction temperature ( c) -25 25 75 175 3.6 3.2 2.8 2.4 0.8 figure 5. baseemitter voltage 2000 1000 t j = 150 c 25 c -55 c i c , collector current (amps) h fe , dc current gain t j , junction temperature ( c) t j , junction temperature ( c) 125 20,000 1000 2000 3000 5000 10,000 7000 1.0 0.7 0.5 v ce(sat) , collector-emitter saturation voltage (volts) 0.5 1.0 2.0 3.0 5.0 7.0 10 4.0 0.7 -50 -25 0 25 50 75 100 125 150 175 5.0 -75 2.0 3.0 1.0 0.7 -50 -25 0 25 50 75 100 125 150 175 2.0 1.6 1.2 4.0 -75 -25 25 75 175 3.6 3.2 2.8 2.4 0.8 125 2.0 1.6 1.2 100 c t j = 150 c 100 c 25 c -55 c v ce = 4.0 v i c = 5.0 a, i b = 10 ma i c = 1.0 a, i b = 2.0 ma i c = 10 a, i b = 4.0 ma i c = 5.0 a, i b = 10 ma i c = 1.0 a, i b = 2.0 ma v ce = 4.0 v i c = 10 a 5.0 a 1.0 a v ce = 4.0 v i c = 10 a 5.0 a 1.0 a typical characteristics
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 4 activeregion safe operating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. secondary breakdown limit bonding wire limit thermal limitation @ t c = 25 c figure 6. activeregion safe operating area dc v ce , collector-emitter voltage (volts) 2.0 i c , collector current (amp) (ma) 10 10 0.2 5.0 20 1.0 20 t j = 150 c 50 30 tip140, 145 3.0 7.0 15 70 100 tip141, 146 tip142, 147 i c , collector current (amps) 15 10 1.0 2.0 5.0 7.0 figure 7. unclamped inductive load l, unclamped inductive load (mh) 0.5 1.0 2.0 5.0 10 20 50 100 100 mj input mps-u52 50 50 r bb1 1.5k r bb2 = 100 v bb2 = 0 v bb1 = 10 v tut v ce monitor 100 mh v cc = 20 v i c monitor r s = 0.1 test circuit note 1: input pulse width is increased until i cm = 1.42 a. note 2: for npn test circuit reverse polarities. input voltage collector current 1.42 a v ce(sat) -20 v collector voltage v (br)cer w 7.0 ms (see note 1) 5.0 v 0 100 ms 0 voltage and current waveforms figure 8. inductive load
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 5 p d , power dissipation (watts) pnp npn figure 9. magnitude of common emitter smallsignal shortcircuit forward current transfer ratio f, frequency (mhz) 2.0 1.0 10 5.0 100 1.0 3.0 5.0 7.0 2.0 7.0 10 v ce = 10 v i c = 1.0 a t j = 25 c 5.0 4.0 0 1.0 2.0 3.0 figure 10. freeair temperature power derating t a , free-air temperature ( c) 0 40 80 120 160 200 h fe , small-signal forward current transfer ratio 20 50 70 pnp npn
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 6 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 7 notes
tip140 tip141 tip142 tip145 tip146 tip147 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip140/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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